Sustainable Power Electronics Devices Using 3D Layer Growth of GaN-on-Si

There is a global need to develop more sustainable energy solutions. International collaborations can help address this task at scale. Renewable energy generation is an important prospect that uses power electronics systems for its conversion. However, the performance of the power electronics devices that are traditionally made of silicon is limited. New materials such as silicon carbide and gallium nitride (GaN) allow more compact and efficient power converters. GaN has polarization properties and alloys (InGaN, AlGaN...) that allow tuning of its electronic and optical characteristics to build a wide range of devices. The study of GaN growth conditions is important to achieve the desired properties and performance. GaN power electronics devices have been developed using 2D layers with limited thickness when produced on a budget-friendly substrate such as silicon. Thicker layers for higher voltage devices are possible on more costly GaN substrates. An approach to achieve higher thickness on silicon is by growing 3D layers. Our collaboration between CEA-LETI and theStanford Wide Band gap Laboratory (SWBL) proposes to compare both substrate options. It will buildupon the GaN power devices and material growth background of SWBL and CEA-LETI on GaN and Sisubstrates respectively.